Discrete Semiconductor Products

SI1958DH-T1-E3

Obsolete

MOSFET 2N-CH 20V 1.3A SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 20V 1.3A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1958DH-T1-E3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	1.3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	3.8 nC
Input Capacitance (Ciss) (Max) @ Vds	105 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	205 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.6 V

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Configuration	FET Feature	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI1958DH-T1-E3	3.8 nC	6-TSSOP SC-88 SOT-363	105 pF	1.6 V	Surface Mount	20 V	SC-70-6	2 N-Channel (Dual)	Logic Level Gate	MOSFET (Metal Oxide)	-55 °C	150 °C	205 mOhm	1.25 W	1.3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 1.3A 1.25W Surface Mount SC-70-6

Technical documentation and resources