SI1958 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 20V 1.3A SC70-6
| Part | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Configuration | FET Feature | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 3.8 nC | 6-TSSOP SC-88 SOT-363 | 105 pF | 1.6 V | Surface Mount | 20 V | SC-70-6 | 2 N-Channel (Dual) | Logic Level Gate | MOSFET (Metal Oxide) | -55 °C | 150 °C | 205 mOhm | 1.25 W | 1.3 A |