Discrete Semiconductor Products

SIB911DK-T1-GE3

Obsolete

MOSFET 2P-CH 20V 2.6A SC75-6L

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Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 20V 2.6A SC75-6L

Technical Specifications

Parameters and characteristics for this part

Specification	SIB911DK-T1-GE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	4 nC
Input Capacitance (Ciss) (Max) @ Vds	115 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-75-6L Dual
Power - Max [Max]	3.1 W
Rds On (Max) @ Id, Vgs	295 mOhm
Supplier Device Package	PowerPAK® SC-75-6L Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Power - Max [Max]	Configuration	Technology
Vishay General Semiconductor - Diodes Division SIB911DK-T1-GE3	295 mOhm	115 pF	4 nC	20 V	-55 °C	150 °C	2.6 A	PowerPAK® SC-75-6L Dual	Surface Mount	1 V	PowerPAK® SC-75-6L Dual	3.1 W	2 P-Channel	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 2.6A 3.1W Surface Mount PowerPAK® SC-75-6L Dual

Technical documentation and resources

No documents available