Discrete Semiconductor Products

SIHF530-GE3

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MOSFET N-CH 100V 14A TO220AB

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Discrete Semiconductor Products

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MOSFET N-CH 100V 14A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHF530-GE3

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	670 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	88 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SIHF530STRL-GE3	26 nC	20 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	-55 °C	175 ░C	160 mOhm	MOSFET (Metal Oxide)	670 pF	10 V	N-Channel	TO-263 (D2PAK)	3.7 W 88 W	14 A	100 V
Vishay General Semiconductor - Diodes Division SIHF530-GE3	26 nC	20 V	Through Hole	TO-220-3	4 V	-55 °C	175 ░C	160 mOhm	MOSFET (Metal Oxide)	670 pF	10 V	N-Channel	TO-220AB		14 A	100 V	88 W

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General part information

N-Channel 100 V 14A (Tc) 88W (Tc) Through Hole TO-220AB

Technical documentation and resources