SIHF530 Series

Catalog

MOSFET N-CH 100V 14A D2PAK

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]
Vishay General Semiconductor - Diodes Division SIHF530STRL-GE3	26 nC	20 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	-55 °C	175 ░C	160 mOhm	MOSFET (Metal Oxide)	670 pF	10 V	N-Channel	TO-263 (D2PAK)	3.7 W 88 W	14 A	100 V
Vishay General Semiconductor - Diodes Division SIHF530-GE3	26 nC	20 V	Through Hole	TO-220-3	4 V	-55 °C	175 ░C	160 mOhm	MOSFET (Metal Oxide)	670 pF	10 V	N-Channel	TO-220AB		14 A	100 V	88 W