IRC640PBF

Obsolete

MOSFET N-CH 200V 18A TO220-5

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 18A TO220-5

Technical Specifications

Parameters and characteristics for this part

Specification	IRC640PBF

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Feature	Current Sensing
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-5
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-220-5
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case
Vishay General Semiconductor - Diodes Division IRC640PBF	MOSFET (Metal Oxide)	20 V	1300 pF	Current Sensing	N-Channel	70 nC	-55 °C	150 °C	4 V	18 A	125 W	Through Hole	10 V	TO-220-5	200 V	180 mOhm	TO-220-5

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220-5

Technical documentation and resources