IRC640 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 200V 18A TO220-5
| Part | Technology | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 20 V | 1300 pF | Current Sensing | N-Channel | 70 nC | -55 °C | 150 °C | 4 V | 18 A | 125 W | Through Hole | 10 V | TO-220-5 | 200 V | 180 mOhm | TO-220-5 |