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DO-204AH, DO-35, Axial
Discrete Semiconductor Products

JANTXV1N647-1

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Microchip Technology

DIODE GEN PURP 400V 400MA DO35

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DO-204AH, DO-35, Axial
Discrete Semiconductor Products

JANTXV1N647-1

Active
Microchip Technology

DIODE GEN PURP 400V 400MA DO35

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV1N647-1
Current - Average Rectified (Io)400 mA
Current - Reverse Leakage @ Vr50 nA
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseAxial, DO-35, DO-204AH
QualificationMIL-PRF-19500/240
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageDO-204AH (DO-35)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]400 V
Voltage - Forward (Vf) (Max) @ If1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

1N6471-e3 Series

This series of industry recognized voidless-hermetically-sealed Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-PRF-19500/552 and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a Working Peak "Standoff" Voltage selection from 5.0 to 51.6 Volts with 1500 W ratings. They are very robust in hard-glass construction and also use an internal metallurgical bond identified as Category I for high reliability applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These devices are also available in a surface mount MELF package configuration by adding a ?US? suffix (see separate data sheet for 1N6469US thru 1N6476AUS). Microchip also offers numerous other TVS products to meet higher and lower peak pulse power and voltage ratings in both through-hole and surface-mount packages.

Documents

Technical documentation and resources