STB80NF10T4
ActiveN-CHANNEL 100V - 0.012OHM - 80A - D2PAK LOW GATE CHARGE STRIPFET(TM) MOSFET
STB80NF10T4
ActiveN-CHANNEL 100V - 0.012OHM - 80A - D2PAK LOW GATE CHARGE STRIPFET(TM) MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STB80NF10T4 |
|---|---|
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 182 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) @ Id, Vgs | 15 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB80NF10 Series
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
Documents
Technical documentation and resources