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8 PowerVDFN
Discrete Semiconductor Products

STL16N60M2

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STMicroelectronics

N-CHANNEL 600 V, 0.29 OHM TYP., 8 A MDMESH M2 POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE

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8 PowerVDFN
Discrete Semiconductor Products

STL16N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.29 OHM TYP., 8 A MDMESH M2 POWER MOSFET IN A POWERFLAT 5X6 HV PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL16N60M2
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]704 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)52 W
Rds On (Max) @ Id, Vgs355 mOhm
Supplier Device PackagePowerFlat™ (5x6) HV
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.36
10$ 1.96
100$ 1.56
500$ 1.32
1000$ 1.12
Digi-Reel® 1$ 2.36
10$ 1.96
100$ 1.56
500$ 1.32
1000$ 1.12
N/A 3000$ 3.06
Tape & Reel (TR) 3000$ 1.07
6000$ 1.03
9000$ 0.99

Description

General part information

STL16 Series

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.