Discrete Semiconductor Products

RJ1L12BGNTLL

NRND

NCH 60V 120A POWER MOSFET : RJ1L

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Discrete Semiconductor Products

NRND

NCH 60V 120A POWER MOSFET : RJ1L

Technical Specifications

Parameters and characteristics for this part

Specification	RJ1L12BGNTLL

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	175 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	9000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	192 W
Rds On (Max) @ Id, Vgs	2.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Operating Temperature	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
Rohm Semiconductor RJ1L12CGNTLL	166 W	3.4 mOhm	Surface Mount	20 V	120 A	139 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	7100 pF	4.5 V 10 V	N-Channel	2.5 V	150 °C	60 V
Rohm Semiconductor RJ1L12BGNTLL			Surface Mount	20 V	120 A		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	9000 pF	4.5 V 10 V	N-Channel	2.5 V	150 °C	60 V	192 W	175 nC	2.9 mOhm

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General part information

N-Channel 60 V 120A (Tc) 192W (Tc) Surface Mount TO-263AB

Technical documentation and resources

No documents available