RJ1L12 Series
Manufacturer: Rohm Semiconductor
NCH 60V 120A POWER MOSFET: RJ1L1
| Part | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Power Dissipation (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Vgs (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 7100 pF | 60 V | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 166 W | TO-263AB | 2.5 V | 120 A | 150 °C | 20 V | MOSFET (Metal Oxide) | 4.5 V 10 V | N-Channel | 3.4 mOhm | 139 nC | |
Rohm Semiconductor | 9000 pF | 60 V | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 192 W | TO-263AB | 2.5 V | 120 A | 150 °C | 20 V | MOSFET (Metal Oxide) | 4.5 V 10 V | N-Channel | 2.9 mOhm | 175 nC |