GANE1R8-100QBAZ
Active100 V, 1.8 MOHM GALLIUM NITRIDE (GAN) FET IN A 4.0 MM X 6.0 MM VERY-THIN-PROFILE QUAD FLAT NO-LEAD PACKAGE (VQFN)
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GANE1R8-100QBAZ
Active100 V, 1.8 MOHM GALLIUM NITRIDE (GAN) FET IN A 4.0 MM X 6.0 MM VERY-THIN-PROFILE QUAD FLAT NO-LEAD PACKAGE (VQFN)
Technical Specifications
Parameters and characteristics for this part
| Specification | GANE1R8-100QBAZ |
|---|---|
| null | |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2480 | $ 12.42 | |
Description
General part information
GANE1R8-100QBA Series
The GANE1R8-100QBA is a a general purpose 100 V, 1.8 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.
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