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GANE1R8-100QBAZActive
Nexperia USA Inc.
100 V, 1.8 MOHM GALLIUM NITRIDE (GAN) FET IN A 4.0 MM X 6.0 MM VERY-THIN-PROFILE QUAD FLAT NO-LEAD PACKAGE (VQFN)
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GANE1R8-100QBAZ | Datasheet
Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs