Discrete Semiconductor Products

PSMN1R1-30YLEX

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PSMN1R1-30YLE/SOT669/LFPAK

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Discrete Semiconductor Products

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PSMN1R1-30YLE/SOT669/LFPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN1R1-30YLEX

Current - Continuous Drain (Id) @ 25°C	265 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	102 nC
Input Capacitance (Ciss) (Max) @ Vds	6317 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	192 W
Rds On (Max) @ Id, Vgs	1.26 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Supplier Device Package	FET Type	Technology	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]
Freescale Semiconductor - NXP PSMN1R6-25YLEX	3698 pF	SC-100 SOT-669	124 W	2.2 V	61 nC	-55 °C	175 ░C	20 V	Surface Mount	LFPAK56 Power-SO8	N-Channel	MOSFET (Metal Oxide)	1.88 mOhm	185 A	25 V
Freescale Semiconductor - NXP PSMN1R1-30YLEX	6317 pF	SC-100 SOT-669				-55 °C	175 ░C	20 V	Surface Mount	LFPAK56 Power-SO8	N-Channel	MOSFET (Metal Oxide)		265 A	30 V	192 W	1.26 mOhm	102 nC	2.2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 265A (Tc) 192W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources