Discrete Semiconductor Products
STL8N6LF6AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 60 V, 21 MOHM TYP., 32 A STRIPFET F6 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE
Discrete Semiconductor Products
STL8N6LF6AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 60 V, 21 MOHM TYP., 32 A STRIPFET F6 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL8N6LF6AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 32 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1340 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 4.8 W, 55 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 27 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2429 | $ 1.68 | |
Description
General part information
STL8N6LF6AG Series
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Documents
Technical documentation and resources