STW65N045M9-4
ActiveN-CHANNEL 650 V, 39 MOHM TYP., 54 A MDMESH M9 POWER MOSFET IN A TO247-4 PACKAGE
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STW65N045M9-4
ActiveN-CHANNEL 650 V, 39 MOHM TYP., 54 A MDMESH M9 POWER MOSFET IN A TO247-4 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STW65N045M9-4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 54 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 80 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4610 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 312 W |
| Rds On (Max) @ Id, Vgs | 45 mOhm |
| Supplier Device Package | TO-247-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
MDmesh M9 Series
N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET in a TO247-4 package
| Part | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Technology | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | TO-247-4 | 150 °C | -55 °C | 463 W | 95 A | 650 V | 230 nC | N-Channel | MOSFET (Metal Oxide) | 30 V | 10 V | TO-247-4 | 23 mOhm | Through Hole | 8844 pF | |
STMicroelectronics | TO-247-4 | 150 °C | -55 °C | 312 W | 54 A | 650 V | 80 nC | N-Channel | MOSFET (Metal Oxide) | 30 V | 10 V | TO-247-4 | 45 mOhm | Through Hole | 4610 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
MDmesh M9 Series
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on)per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Documents
Technical documentation and resources