Discrete Semiconductor Products

STU10P6F6

Obsolete

MOSFET P-CH 60V 10A IPAK

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 10A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU10P6F6

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	340 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	35 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	IPAK
Supplier Device Package	TO-251
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Supplier Device Package	Power Dissipation (Max)
STMicroelectronics STU10P6F6	10 A	P-Channel	6.4 nC	20 V	10 V	MOSFET (Metal Oxide)	175 °C	60 V	Through Hole	160 mOhm	340 pF	4 V	IPAK TO-251-3 Short Leads TO-251AA	IPAK	TO-251	35 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.63

General part information

P-Channel 60 V 10A (Tc) 35W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources