Discrete Semiconductor Products

STD30NE06LT4

Obsolete

MOSFET N-CH 60V 30A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 30A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STD30NE06LT4

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	41 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2370 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	55 W
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Supplier Device Package
STMicroelectronics STD30NE06LT4	MOSFET (Metal Oxide)	5 V 10 V	N-Channel	55 W	175 °C	60 V	2370 pF	2.5 V	20 V	30 A	28 mOhm	41 nC	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.66

General part information

N-Channel 60 V 30A (Tc) 55W (Tc) Surface Mount DPAK

Technical documentation and resources