Discrete Semiconductor Products

SISS70DN-T1-GE3

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MOSFET N-CH 125V 8.5A/31A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 125V 8.5A/31A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS70DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	8.5 A, 31 A
Drain to Source Voltage (Vdss)	125 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.3 nC
Input Capacitance (Ciss) (Max) @ Vds	535 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	5.1 W, 65.8 W
Rds On (Max) @ Id, Vgs	29.8 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)
Vishay General Semiconductor - Diodes Division SISS70DN-T1-GE3	PowerPAK® 1212-8S	-55 °C	150 °C	4.5 V	10 V	15.3 nC	N-Channel	PowerPAK® 1212-8S	535 pF	MOSFET (Metal Oxide)	29.8 mOhm	5.1 W 65.8 W	8.5 A 31 A	Surface Mount	125 V	20 V

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General part information

N-Channel 125 V 8.5A (Ta), 31A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources