SISS70 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 125V 8.5A/31A PPAK
| Part | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Technology | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drain to Source Voltage (Vdss) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8S | -55 °C | 150 °C | 4.5 V | 10 V | 15.3 nC | N-Channel | PowerPAK® 1212-8S | 535 pF | MOSFET (Metal Oxide) | 29.8 mOhm | 5.1 W 65.8 W | 8.5 A 31 A | Surface Mount | 125 V | 20 V |