Discrete Semiconductor Products

IRFPS38N60LPBF

Obsolete

MOSFET N-CH 600V 38A SUPER247

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 38A SUPER247

Technical Specifications

Parameters and characteristics for this part

Specification	IRFPS38N60LPBF

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	320 nC
Input Capacitance (Ciss) (Max) @ Vds	7990 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-274AA
Power Dissipation (Max) [Max]	540 W
Rds On (Max) @ Id, Vgs [Max]	150 mOhm
Supplier Device Package	SUPER-247™ (TO-274AA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	FET Type	Mounting Type
Vishay General Semiconductor - Diodes Division IRFPS38N60LPBF	7990 pF	-55 °C	150 °C	38 A	5 V	MOSFET (Metal Oxide)	SUPER-247™ (TO-274AA)	320 nC	10 V	TO-274AA	540 W	600 V	30 V	150 mOhm	N-Channel	Through Hole
Vishay General Semiconductor - Diodes Division IRFPS38N60L	7990 pF	-55 °C	150 °C	38 A	5 V	MOSFET (Metal Oxide)	SUPER-247™ (TO-274AA)	320 nC	10 V	TO-274AA	540 W	600 V	30 V	150 mOhm	N-Channel	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 38A (Tc) 540W (Tc) Through Hole SUPER-247™ (TO-274AA)

Technical documentation and resources