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STTH8R06GY-TR
Discrete Semiconductor Products

STTH8R06GY-TR

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STMicroelectronics

AUTOMOTIVE 600 V, 8 A TURBO 2 ULTRAFAST DIODE

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STTH8R06GY-TR
Discrete Semiconductor Products

STTH8R06GY-TR

Active
STMicroelectronics

AUTOMOTIVE 600 V, 8 A TURBO 2 ULTRAFAST DIODE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTTH8R06GY-TR
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr30 µA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-40 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
QualificationAEC-Q101
Reverse Recovery Time (trr)45 ns
Speed500 ns, 200 mA
Supplier Device PackageD2PAK
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If [Max]3.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2795$ 1.74

Description

General part information

STTH8R06-Y Series

The STTH8R06, which uses ST Turbo 2 600 V technology, is specially suited as a boost diode in continuous mode power factor correction and hard switching conditions. This device is also intended for use as a free wheeling diode in power supplies and other power switching applications.