Discrete Semiconductor Products

NX3020NAKV,115

NRND

MOSFET 2N-CH 30V 0.2A SOT666

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Discrete Semiconductor Products

NRND

MOSFET 2N-CH 30V 0.2A SOT666

Technical Specifications

Parameters and characteristics for this part

Specification	NX3020NAKV,115

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	0.44 nC
Input Capacitance (Ciss) (Max) @ Vds	13 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	375 mW
Rds On (Max) @ Id, Vgs	4.5 Ohm
Supplier Device Package	SOT-666
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Configuration	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs(th) (Max) @ Id	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Package / Case	FET Feature
Freescale Semiconductor - NXP NX3020NAKVYL	MOSFET (Metal Oxide)	4.5 Ohm	20 pF	SOT-666	2 N-Channel (Dual)	200 mA	0.44 nC	Surface Mount	1.5 V	260 mW	-55 °C	150 °C	30 V	SOT-563 SOT-666
Freescale Semiconductor - NXP NX3020NAKV,115	MOSFET (Metal Oxide)	4.5 Ohm	13 pF	SOT-666	2 N-Channel (Dual)	200 mA	0.44 nC	Surface Mount	1.5 V	375 mW	-55 °C	150 °C	30 V	SOT-563 SOT-666	Logic Level Gate

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General part information

Mosfet Array 30V 200mA 375mW Surface Mount SOT-666

Technical documentation and resources