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30 V, 200 mA dual N-channel Trench MOSFET
Description
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Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, 200 mA dual N-channel Trench MOSFET
30 V, 200 mA dual N-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Package / Case | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Power - Max [Max] | Technology | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Configuration | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 0.44 nC | 1.5 V | SOT-563 SOT-666 | 30 V | 4.5 Ohm | 20 pF | SOT-666 | 260 mW | MOSFET (Metal Oxide) | Surface Mount | 150 °C | -55 °C | 2 N-Channel (Dual) | 200 mA | ||
Nexperia USA Inc. | 0.44 nC | 1.5 V | SOT-563 SOT-666 | 30 V | 4.5 Ohm | SOT-666 | 375 mW | MOSFET (Metal Oxide) | Surface Mount | 150 °C | -55 °C | 2 N-Channel (Dual) | 200 mA | 13 pF | Logic Level Gate |