Discrete Semiconductor Products

NDS355AN_G

Obsolete

ON Semiconductor

MOSFET N-CH 30V 1.7A SUPERSOT3

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Discrete Semiconductor Products

NDS355AN_G

Obsolete

ON Semiconductor

MOSFET N-CH 30V 1.7A SUPERSOT3

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NDS355AN_G

Current - Continuous Drain (Id) @ 25°C	1.7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	195 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NDS355AN Series

N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.7A, 85mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case
ON Semiconductor NDS355AN-F169	4.5 V 10 V	1.7 A	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	195 pF	85 mOhm	20 V	2 V	30 V	SOT-23-3	500 mW	N-Channel	5 nC	SC-59 SOT-23-3 TO-236-3
ON Semiconductor NDS355AN_G	4.5 V 10 V	1.7 A	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	195 pF	85 mOhm	20 V	2 V	30 V	SOT-23-3	500 mW	N-Channel	5 nC	SC-59 SOT-23-3 TO-236-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NDS355AN Series

SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Documents

Technical documentation and resources

No documents available