NDS355AN Series

N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.7A, 85mΩ

Catalog

N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.7A, 85mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case
ON Semiconductor NDS355AN-F169	4.5 V 10 V	1.7 A	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	195 pF	85 mOhm	20 V	2 V	30 V	SOT-23-3	500 mW	N-Channel	5 nC	SC-59 SOT-23-3 TO-236-3
ON Semiconductor NDS355AN_G	4.5 V 10 V	1.7 A	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	195 pF	85 mOhm	20 V	2 V	30 V	SOT-23-3	500 mW	N-Channel	5 nC	SC-59 SOT-23-3 TO-236-3

Catalog

N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.7A, 85mΩ

Key Features

• 1.7 A, 30 V. RDS(ON)= 0.125Ω @ VGS= 4.5 VRDS(ON)= 0.085 Ω @ VGS= 10 V

• Industry standard outline SOT-23 surface mount package using poprietary SuperSOT™-3 design for superior thermal and electrical capabilities

• High density cell design for extremely low RDS(ON)

• Exceptional on-resistance and maximum DC current capability

• Compact industry standard SOT-23 surface mount package

Description

SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.