Discrete Semiconductor Products

SQJ962EP-T1-GE3

Obsolete

MOSFET 2N-CH 60V 8A PPAK SO8

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 60V 8A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ962EP-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	14 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	475 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	25 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	60 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Power - Max [Max]	Technology	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Grade	Qualification	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	FET Feature	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SQJ962EP-T1-GE3	PowerPAK® SO-8 Dual	60 V	475 pF	2.5 V	25 W	MOSFET (Metal Oxide)	PowerPAK® SO-8 Dual	-55 °C	175 ░C	2 N-Channel (Dual)	Automotive	AEC-Q101	Surface Mount	60 mOhm	Logic Level Gate	8 A	14 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 60V 8A 25W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources