SQJ962 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 60V 8A PPAK SO8
| Part | Supplier Device Package | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Power - Max [Max] | Technology | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Configuration | Grade | Qualification | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | FET Feature | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® SO-8 Dual | 60 V | 475 pF | 2.5 V | 25 W | MOSFET (Metal Oxide) | PowerPAK® SO-8 Dual | -55 °C | 175 ░C | 2 N-Channel (Dual) | Automotive | AEC-Q101 | Surface Mount | 60 mOhm | Logic Level Gate | 8 A | 14 nC |