Discrete Semiconductor Products

GCMS040B120S1-E1

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SIC 1200V 40M MOSFET & 15A SBD S

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Discrete Semiconductor Products

Active

SIC 1200V 40M MOSFET & 15A SBD S

Technical Specifications

Parameters and characteristics for this part

Specification	GCMS040B120S1-E1

Current - Continuous Drain (Id) @ 25°C	57 A
Drain to Source Voltage (Vdss)	1.2 kV
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	124 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3110 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	242 W
Rds On (Max) @ Id, Vgs	52 mOhm
Supplier Device Package	SOT-227
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Package / Case	Vgs (Max) [Max]	Vgs (Max) [Min]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
SemiQ GCMS040B120S1-E1	SiC (Silicon Carbide Junction Transistor)	57 A	175 °C	-55 °C	N-Channel	SOT-227-4 miniBLOC	25 V	-10 V	52 mOhm	SOT-227	Chassis Mount	242 W	124 nC	3110 pF	4 V	1.2 kV

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General part information

N-Channel 1200 V 57A (Tc) 242W (Tc) Chassis Mount SOT-227

Technical documentation and resources

No documents available