Discrete Semiconductor Products

GCMS040B120S1-E1

Active

SIC 1200V 40M MOSFET & 15A SBD S

Discrete Semiconductor Products

Active

SIC 1200V 40M MOSFET & 15A SBD S

Technical Specifications

Parameters and characteristics for this part

Specification	GCMS040B120S1-E1

Current - Continuous Drain (Id) (Tc)	57 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	124 nC
Input Capacitance (Ciss) (Max)	3110 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-227-4, miniBLOC
Package Name	SOT-227
Power Dissipation (Max)	242 W
Rds On (Max)	52 mOhm
Technology	SiC (Silicon Carbide Junction Transistor), SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	4 V

Part	Technology	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max) Negative	Vgs (Max) Positive	Rds On (Max)	Package Name	Mounting Type	Power Dissipation (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)
SemiQ GCMS040B120S1-E1	SiC (Silicon Carbide Junction Transistor) SiCFET (Silicon Carbide)	57 A	-55 °C	175 °C	N-Channel	20 V	miniBLOC SOT-227-4	-10 V	25 V	52 mOhm	SOT-227	Chassis Mount	242 W	124 nC	3110 pF	4 V	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 1200 V 57A (Tc) 242W (Tc) Chassis Mount SOT-227

Technical documentation and resources

No documents available