Discrete Semiconductor Products

STGW100H65FB2-4

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STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 100 A, HIGH-SPEED HB2 SERIES IGBT IN A TO247-4 PACKAGE

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN TN1224 +13

Discrete Semiconductor Products

STGW100H65FB2-4

Active

STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 100 A, HIGH-SPEED HB2 SERIES IGBT IN A TO247-4 PACKAGE

Deep-Dive with AI

DocumentsTechnical Data Sheet EN TN1224 +13

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGW100H65FB2-4

Current - Collector (Ic) (Max) [Max]	145 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	288 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power - Max [Max]	441 W
Supplier Device Package	TO-247-4
Switching Energy	1.14 mJ, 1.06 mJ
Td (on/off) @ 25°C [custom]	23 ns
Td (on/off) @ 25°C [custom]	141 ns
Test Condition	100 A, 15 V, 400 V, 3.3 Ohm
Vce(on) (Max) @ Vge, Ic [Max]	1.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

STGW100H65FB2-4 Series

Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 package

Part	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Mounting Type	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Supplier Device Package	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic [Max]	Gate Charge	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Test Condition	Current - Collector Pulsed (Icm)
STMicroelectronics STGW100H65FB2-4	175 °C	-55 °C	TO-247-4	Through Hole	Trench Field Stop	650 V	1.06 mJ 1.14 mJ	TO-247-4	441 W	1.8 V	288 nC	145 A	23 ns	141 ns	3.3 Ohm 15 V 100 A 400 V	300 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	68	$ 9.64
Newark	Each	1	$ 11.78
		10	$ 9.81
		25	$ 7.84
		60	$ 7.35
		120	$ 6.86
		270	$ 6.54

Description

General part information

STGW100H65FB2-4 Series

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.