Discrete Semiconductor Products

SIDR392DP-T1-GE3

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MOSFET N-CH 30V 82A/100A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 30V 82A/100A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIDR392DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	100 A, 82 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	188 nC
Input Capacitance (Ciss) (Max) @ Vds	9530 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25 W, 125 W
Rds On (Max) @ Id, Vgs	0.62 mOhm
Supplier Device Package	PowerPAK® SO-8DC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	FET Type
Vishay General Semiconductor - Diodes Division SIDR392DP-T1-GE3	82 A 100 A	188 nC	30 V	PowerPAK® SO-8DC	2.2 V	-55 °C	150 °C	6.25 W 125 W	0.62 mOhm	4.5 V 10 V	PowerPAK® SO-8	MOSFET (Metal Oxide)	9530 pF	Surface Mount	-16 V 20 V	N-Channel

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General part information

N-Channel 30 V 82A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

Technical documentation and resources