SIDR392 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 82A/100A PPAK
| Part | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Supplier Device Package | Vgs(th) (Max) @ Id [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Vgs (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 82 A 100 A | 188 nC | 30 V | PowerPAK® SO-8DC | 2.2 V | -55 °C | 150 °C | 6.25 W 125 W | 0.62 mOhm | 4.5 V 10 V | PowerPAK® SO-8 | MOSFET (Metal Oxide) | 9530 pF | Surface Mount | -16 V 20 V | N-Channel |