Specification	STTH30S12W

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	DO-247-2 (Straight Leads)
Reverse Recovery Time (trr)	50 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-247
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	2.9 V

STTH30S12 Series

1200 V, 30 A Ultrafast Boost Diode

Part	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Technology	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Reverse Recovery Time (trr)
STMicroelectronics STTH30S12W	DO-247	1.2 kV	Through Hole	15 µA	DO-247-2 (Straight Leads)	2.9 V	200 mA 500 ns	Standard	30 A	175 ░C	50 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.99
Newark	Each	1	$ 2.70

General part information

The STTH30S12 is developed using ST’s Turbo 2 1200 V technology. It is well-suited as a boost diode, especially for use in UPS.

Technical documentation and resources