Discrete Semiconductor Products

SIHFR1N60ATR-GE3

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MOSFET N-CH 600V 1.4A DPAK

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Discrete Semiconductor Products

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MOSFET N-CH 600V 1.4A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHFR1N60ATR-GE3

Current - Continuous Drain (Id) @ 25°C	1.4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	229 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	36 W
Rds On (Max) @ Id, Vgs [Max]	7 Ohm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	FET Type	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology
Vishay General Semiconductor - Diodes Division SIHFR1N60ATR-GE3	229 pF	Surface Mount	10 V	TO-252AA	30 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V	1.4 A	36 W	600 V	-55 °C	150 °C	7 Ohm	14 nC	MOSFET (Metal Oxide)

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General part information

N-Channel 600 V 1.4A (Tc) 36W (Tc) Surface Mount TO-252AA

Technical documentation and resources