SIHFR1 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 1.4A DPAK
| Part | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Vgs (Max) | FET Type | Package / Case | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 229 pF | Surface Mount | 10 V | TO-252AA | 30 V | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4 V | 1.4 A | 36 W | 600 V | -55 °C | 150 °C | 7 Ohm | 14 nC | MOSFET (Metal Oxide) |