Discrete Semiconductor Products
STD15P6F6AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE P-CHANNEL -60 V, 0.13 OHM TYP., -10 A STRIPFET F6 POWER MOSFET IN A DPAK PACKAGE
Discrete Semiconductor Products
STD15P6F6AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE P-CHANNEL -60 V, 0.13 OHM TYP., -10 A STRIPFET F6 POWER MOSFET IN A DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD15P6F6AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6.4 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 340 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 35 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 160 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD15P6F6AG Series
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Documents
Technical documentation and resources