Discrete Semiconductor Products
STU2N62K3
ActiveSTMicroelectronics
N-CHANNEL 620 V, 3 OHM, 2.2 A, IPAK SUPERMESH3(TM) POWER MOSFET
Discrete Semiconductor Products
STU2N62K3
ActiveSTMicroelectronics
N-CHANNEL 620 V, 3 OHM, 2.2 A, IPAK SUPERMESH3(TM) POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STU2N62K3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.2 A |
| Drain to Source Voltage (Vdss) | 620 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) @ Id, Vgs | 3.6 Ohm |
| Supplier Device Package | IPAK |
| Supplier Device Package | TO-251 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 4708 | $ 1.82 | |
Description
General part information
STU2N62K3 Series
These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Documents
Technical documentation and resources