Discrete Semiconductor Products

IRLR110TRPBF

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MOSFET N-CH 100V 4.3A DPAK

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Discrete Semiconductor Products

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MOSFET N-CH 100V 4.3A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRLR110TRPBF

Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	25 W, 2.5 W
Rds On (Max) @ Id, Vgs	540 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division IRLR110TR	250 pF	4.3 A	540 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	100 V	2.5 W 25 W	MOSFET (Metal Oxide)	Surface Mount	N-Channel	4 V 5 V	-55 °C	150 °C	DPAK	10 V	2 V
Vishay General Semiconductor - Diodes Division IRLR110TRPBF	250 pF	4.3 A	540 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	100 V	2.5 W 25 W	MOSFET (Metal Oxide)	Surface Mount	N-Channel	4 V 5 V	-55 °C	150 °C	DPAK	10 V	2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount DPAK

Technical documentation and resources