IRLR110 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 4.3A DPAK
| Part | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Package / Case | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Technology | Mounting Type | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Vgs (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 250 pF | 4.3 A | 540 mOhm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 100 V | 2.5 W 25 W | MOSFET (Metal Oxide) | Surface Mount | N-Channel | 4 V 5 V | -55 °C | 150 °C | DPAK | 10 V | 2 V |
Vishay General Semiconductor - Diodes Division | 250 pF | 4.3 A | 540 mOhm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 100 V | 2.5 W 25 W | MOSFET (Metal Oxide) | Surface Mount | N-Channel | 4 V 5 V | -55 °C | 150 °C | DPAK | 10 V | 2 V |