Discrete Semiconductor Products

SISH107DN-T1-GE3

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P-CHANNEL 30 V (D-S) MOSFET POWE

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Discrete Semiconductor Products

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P-CHANNEL 30 V (D-S) MOSFET POWE

Technical Specifications

Parameters and characteristics for this part

Specification	SISH107DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	34.4 A, 12.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SH
Power Dissipation (Max)	3.57 W, 26.5 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Supplier Device Package	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SISH107DN-T1-GE3	PowerPAK® 1212-8SH	14 mOhm	4.5 V 10 V	41 nC	12.6 A 34.4 A	P-Channel	20 V	2.5 V	1400 pF	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	PowerPAK® 1212-8SH	3.57 W 26.5 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 12.6A (Ta), 34.4A (Tc) 3.57W (Ta), 26.5W (Tc) Surface Mount PowerPAK® 1212-8SH

Technical documentation and resources