SISH107 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
P-CHANNEL 30 V (D-S) MOSFET POWE
| Part | Package / Case | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Mounting Type | Supplier Device Package | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8SH | 14 mOhm | 4.5 V 10 V | 41 nC | 12.6 A 34.4 A | P-Channel | 20 V | 2.5 V | 1400 pF | 30 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | Surface Mount | PowerPAK® 1212-8SH | 3.57 W 26.5 W |