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TO-247-3 HiP
Discrete Semiconductor Products

STW42N65M5

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STMicroelectronics

N-CHANNEL 650 V, 70 MOHM TYP., 33 A MDMESH M5 POWER MOSFET IN A TO-247 PACKAGE

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TO-247-3 HiP
Discrete Semiconductor Products

STW42N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 70 MOHM TYP., 33 A MDMESH M5 POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW42N65M5
Current - Continuous Drain (Id) @ 25°C33 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs100 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4650 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-247-3
Power Dissipation (Max)190 W
Rds On (Max) @ Id, Vgs79 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 60$ 9.30
Tube 1$ 9.59
10$ 6.64
100$ 5.33

Description

General part information

STW42N65M5 Series

MDmesh™ V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies.