STGWA30M65DF2
ActiveTRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 30 A LOW LOSS IN A TO-247 LONG LEADS PACKAGE
STGWA30M65DF2
ActiveTRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 30 A LOW LOSS IN A TO-247 LONG LEADS PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STGWA30M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 80 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 258 W |
| Reverse Recovery Time (trr) | 140 ns |
| Supplier Device Package | TO-247 Long Leads |
| Switching Energy | 300 µJ, 960 µJ |
| Td (on/off) @ 25°C [custom] | 115 ns |
| Td (on/off) @ 25°C [custom] | 31.6 ns |
| Test Condition | 30 A, 10 Ohm, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGWA30M65DF2 Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources