STY60NM60
ActiveN-CHANNEL 600V - 0.050 OHM - 60A MAX247 ZENER-PROTECTED MDMESH(TM)POWER MOSFET
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STY60NM60
ActiveN-CHANNEL 600V - 0.050 OHM - 60A MAX247 ZENER-PROTECTED MDMESH(TM)POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STY60NM60 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 266 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 7300 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 560 W |
| Rds On (Max) @ Id, Vgs | 55 mOhm |
| Supplier Device Package | MAX247™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 797 | $ 24.08 | |
Description
General part information
STY60NM60 Series
The MDmeshTMis a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTMhorizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.
Documents
Technical documentation and resources