STTH8T06DI
Obsolete600 V TANDEM EXTRAFAST BOOST DIODE
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STTH8T06DI
Obsolete600 V TANDEM EXTRAFAST BOOST DIODE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STTH8T06DI |
|---|---|
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Reverse Recovery Time (trr) | 30 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-220AC ins |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 2.95 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
STTH8T06 Series
This device is part of ST's second generation of 600 V tandem diodes. It has ultralow switching-losses with a minimized QRR(6 nC) that makes it perfect for use in circuits working in hard-switching mode. In particular the VF/QRRtrade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio.
The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints.
Featuring ST's Turbo 2 600 V technology, the device is particularly suited as a boost diode in continuous conduction mode power factor correction circuits.
Documents
Technical documentation and resources