Discrete Semiconductor Products

SIHP18N50C-E3

LTB

MOSFET N-CH 500V 18A TO220AB

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Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 18A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP18N50C-E3

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	76 nC
Input Capacitance (Ciss) (Max) @ Vds	2942 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	223 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIHP18N60E-GE3	TO-220-3	202 mOhm	MOSFET (Metal Oxide)	18 A	N-Channel	Through Hole	4 V	10 V	179 W	92 nC	-55 °C	150 °C	30 V	TO-220AB	1640 pF	600 V
Vishay General Semiconductor - Diodes Division SIHP18N50C-E3	TO-220-3	270 mOhm	MOSFET (Metal Oxide)	18 A	N-Channel	Through Hole	5 V	10 V	223 W	76 nC	-55 °C	150 °C	30 V	TO-220AB		500 V	2942 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 18A (Tc) 223W (Tc) Through Hole TO-220AB

Technical documentation and resources