SIHP18 Series

Catalog

MOSFET N-CH 600V 18A TO220AB

Part	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIHP18N60E-GE3	TO-220-3	202 mOhm	MOSFET (Metal Oxide)	18 A	N-Channel	Through Hole	4 V	10 V	179 W	92 nC	-55 °C	150 °C	30 V	TO-220AB	1640 pF	600 V
Vishay General Semiconductor - Diodes Division SIHP18N50C-E3	TO-220-3	270 mOhm	MOSFET (Metal Oxide)	18 A	N-Channel	Through Hole	5 V	10 V	223 W	76 nC	-55 °C	150 °C	30 V	TO-220AB		500 V	2942 pF