Discrete Semiconductor Products

SSM3K106TU(TE85L)

Obsolete

MOSFET N-CH 20V 1.2A UFM

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 1.2A UFM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K106TU(TE85L)

Current - Continuous Drain (Id) @ 25°C	1.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	36 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	310 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs (Max)	Mounting Type	Operating Temperature	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM3K106TU(TE85L)	36 pF	UFM	20 V	Surface Mount	150 °C	500 mW	4 V	10 V	310 mOhm	N-Channel	1.2 A	MOSFET (Metal Oxide)	2.3 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 1.2A (Ta) 500mW (Ta) Surface Mount UFM

Technical documentation and resources