SSM3K106 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 20V 1.2A UFM
| Part | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | FET Type | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Power Dissipation (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | MOSFET (Metal Oxide) | 20 V | 2.3 V | 310 mOhm | 1.2 A | 20 V | N-Channel | 150 °C | 4 V | 10 V | 500 mW | Surface Mount | 36 pF | UFM |